Type Designator: IRF540N   Type of Transistor: MOSFET   Type of Control Channel: N -Channel   Maximum Power Dissipation (Pd): 130 W   Maximum Drain-Source Voltage |Vds|: 100 V   Maximum Gate-Source Voltage |Vgs|: 20 V   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V   Maximum Drain Current |Id|: 33 A   Maximum Junction Temperature (Tj): 175 °C   Total Gate Charge (Qg): 71(max) nC   Rise Time (tr): 35 nS   Drain-Source Capacitance (Cd): 250 pF   Maximum Drain-Source On-State Resistance (Rds): 0.044 Ohm   Package: TO220AB