Type Designator: IRF8010   Type of Transistor: MOSFET   Type of Control Channel: N -Channel   Maximum Power Dissipation (Pd): 260 W   Maximum Drain-Source Voltage |Vds|: 100 V   Maximum Gate-Source Voltage |Vgs|: 20 V   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V   Maximum Drain Current |Id|: 80 A   Maximum Junction Temperature (Tj): 175 °C   Total Gate Charge (Qg): 81 nC   Rise Time (tr): 130 nS   Drain-Source Capacitance (Cd): 480 pF   Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm   Package: TO220AB