Type Designator: IRF840   Type of Transistor: MOSFET   Type of Control Channel: N -Channel   Maximum Power Dissipation (Pd): 125 W   Maximum Drain-Source Voltage |Vds|: 500 V   Maximum Gate-Source Voltage |Vgs|: 20 V   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V   Maximum Drain Current |Id|: 8 A   Maximum Junction Temperature (Tj): 150 °C   Total Gate Charge (Qg): 63(max) nC   Rise Time (tr): 23 nS   Drain-Source Capacitance (Cd): 310 pF   Maximum Drain-Source On-State Resistance (Rds): 0.85 Ohm   Package: TO220AB