Type Designator: IRFB4127   Type of Transistor: MOSFET   Type of Control Channel: N -Channel   Maximum Power Dissipation (Pd): 375 W   Maximum Drain-Source Voltage |Vds|: 200 V   Maximum Gate-Source Voltage |Vgs|: 20 V   Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V   Maximum Drain Current |Id|: 76 A   Maximum Junction Temperature (Tj): 175 °C   Total Gate Charge (Qg): 100 nC   Rise Time (tr): 18 nS   Drain-Source Capacitance (Cd): 410 pF   Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm   Package: TO220AB